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STPS60L30CW Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STPS60L30CW Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 4 page Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR = VRRM 4mA Tj = 125 °C 250 500 mA VF * Forward voltage drop Tj = 25 °CIF = 30 A 0.46 V Tj = 125 °CIF = 30 A 0.33 0.38 Tj = 25 °CIF = 60 A 0.55 Tj = 125 °CIF = 60 A 0.45 0.5 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.26x IF(AV) + 0.004 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode Total 0.8 0.45 °C/W Rth (c) Coupling 0.1 °C/W THERMAL RESISTANCE When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 PF(av)(W) δ=0.05 δ=0.5 δ=1 δ=0.1 δ=0.2 IF(av) (A) T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) Tamb(°C) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ=0.5) (per diode). STPS60L30CW 2/4 |
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