STP24NM65N datasheet(6/19 Pages) STMICROELECTRONICS

Il numero della parte	STP24NM65N

Spiegazioni elettronici	N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET

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Electrical characteristics

STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N

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Table 7.

Switching times

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD =325 V, ID = 9.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 18)

25

10

80

20

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

19

76

A

VSD

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 19 A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 19 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 20)

460

7

30

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 19 A, di/dt = 100 A/µs

VDD = 100 V, TJ = 150 °C

(see Figure 20)

620

9

29

ns

µC

A

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