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STB21NM60N- Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STB21NM60N- Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 18 page STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Electrical characteristics 5/18 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 17 68 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 17 A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, VDD = 100 V di/dt=100 A/µs (see Figure 20) 372 4.6 25 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A,VDD = 100 V di/dt=100 A/µs, Tj = 150 °C (see Figure 20) 486 6.3 26 ns µC A |
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