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2SC1775AETZ Scheda tecnica(PDF) 2 Page - Renesas Technology Corp |
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2SC1775AETZ Scheda tecnica(HTML) 2 Page - Renesas Technology Corp |
2 / 6 page 2SC1775A Rev.3.00 Mar 03, 2006 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO 120 — — V IC = 1 mA, RBE = ∞ Collector cutoff current ICBO — — 0.5 µA VCB = 100 V, IE = 0 hFE1* 1 400 — 1200 VCE = 12 V, IC = 2 mA DC current transfer ratio hFE2 160 — — VCE = 12 V, IC = 0.1 mA Base to emitter voltage VBE — — 0.75 V VCE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) — — 0.5 V IC = 10 mA, IB = 1 mA Gain bandwidth product fT — 200 — MHz VCE = 12 V, IC = 2 mA Collector output capacitance Cob — 1.6 — pF VCB = 25 V, IE = 0, f = 1 MHz NF — — 5.0 dB f = 10 Hz Noise figure — — 1.5 dB VCE = 6 V, IC = 50 µA, Rg = 50 k Ω f = 1 kHz Note: 1. The 2SC1775A is grouped by hFE1 as follows. E F 400 to 800 600 to 1200 |
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