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STD12NM50N Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STD12NM50N
Spiegazioni elettronici  N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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Electrical characteristics
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
4/19
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
500
V
dv/dt(1)
1.
Characteristic value at turn off inductive load
Peak diode recovery voltage
slope
VDD=400 V, ID=11 A,
VGS=10 V
44
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating@125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
0.29
0.38
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
gfs
(1)
1.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID = 5.5 A
8S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =50 V, f=1 MHz,
VGS=0
940
100
10
pF
pF
pF
Coss eq
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0 to 400 V
130
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400 V, ID = 11 A
VGS =10 V
(see Figure 17)
30
6
15
nC
nC
nC
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
4.5


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