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FQA36P15 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FQA36P15 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 2 www.fairchildsemi.com FQA36P15 / FQA36P15_F109 Rev. B1 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.45mH, IAS =-36A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -36A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQA36P15 FQA36P15 TO-3P -- -- 30 FQA36P15 FQA36P15_F109 TO-3PN -- -- 30 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -150 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.13 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -150 V, VGS = 0 V -- -- -10 µA VDS = -120 V, TC = 150°C -- -- -100 µA IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -18A -- 0.076 0.09 Ω gFS Forward Transconductance VDS = -40 V, ID = -18A (Note 4) -- 19.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2550 3320 pF Coss Output Capacitance -- 710 920 pF Crss Reverse Transfer Capacitance -- 110 140 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -75 V, ID = -36A, RG = 25 Ω (Note 4, 5) -- 50 110 ns tr Turn-On Rise Time -- 350 710 ns td(off) Turn-Off Delay Time -- 155 320 ns tf Turn-Off Fall Time -- 150 310 ns Qg Total Gate Charge VDS = -120 V, ID = -36A, VGS = -10 V (Note 4, 5) -- 81 105 nC Qgs Gate-Source Charge -- 19 -- nC Qgd Gate-Drain Charge -- 42 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -36 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -144 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =-36A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -36 A, dIF / dt = 100 A/µs (Note 4) -- 198 -- ns Qrr Reverse Recovery Charge -- 1.45 -- µC |
Codice articolo simile - FQA36P15_07 |
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Descrizione simile - FQA36P15_07 |
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