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FQA36P15 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FQA36P15
Spiegazioni elettronici  150V P-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA36P15 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FQA36P15 / FQA36P15_F109 Rev. B1
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.45mH, IAS =-36A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -36A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA36P15
FQA36P15
TO-3P
--
--
30
FQA36P15
FQA36P15_F109
TO-3PN
--
--
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-150
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.13
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -150 V, VGS = 0 V
--
--
-10
µA
VDS = -120 V, TC = 150°C
--
--
-100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA-2.0
--
-4.0
V
RDS(on)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -18A
--
0.076
0.09
gFS
Forward Transconductance
VDS = -40 V, ID = -18A
(Note 4)
--
19.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
2550
3320
pF
Coss
Output Capacitance
--
710
920
pF
Crss
Reverse Transfer Capacitance
--
110
140
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -75 V, ID = -36A,
RG = 25 Ω
(Note 4, 5)
--
50
110
ns
tr
Turn-On Rise Time
--
350
710
ns
td(off)
Turn-Off Delay Time
--
155
320
ns
tf
Turn-Off Fall Time
--
150
310
ns
Qg
Total Gate Charge
VDS = -120 V, ID = -36A,
VGS = -10 V
(Note 4, 5)
--
81
105
nC
Qgs
Gate-Source Charge
--
19
--
nC
Qgd
Gate-Drain Charge
--
42
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-36
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-144
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =-36A
--
--
-4.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -36 A,
dIF / dt = 100 A/µs
(Note 4)
--
198
--
ns
Qrr
Reverse Recovery Charge
--
1.45
--
µC


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