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FQA6N90C Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FQA6N90C
Spiegazioni elettronici  900V N-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA6N90C_F109 Rev. A
September 2007
QFET
®
FQA6N90C_F109
900V N-Channel MOSFET
Features
• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 11pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
GS
D
TO-3PN
FQA Series
Symbol
Parameter
FQA6N90C_F109
Units
VDSS
Drain-Source Voltage
900
V
ID
Drain Current
- Continuous (TC = 25°C)
6.0
A
- Continuous (TC = 100°C)
3.87
A
IDM
Drain Current
- Pulsed
(Note 1)
24.0
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
650
mJ
IAR
Avalanche Current
(Note 1)
6.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
19.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25°C)
198
W
- Derate above 25°C
1.59
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.63
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.24
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W


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