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FDD8882 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDD8882 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 12 page  FDD8882/FDU8882 Rev. C www.fairchildsemi.com 2 Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 55 A Continuous (TC = 25 oC, V GS = 10V) (Note 1) Continuous (TC = 25 oC, V GS = 4.5V) (Note 1) 50 A Continuous (Tamb = 25 oC, V GS = 10V, with R θJA = 52 oC/W) 12.6 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 2) 41 mJ PD Power dissipation 55 W Derate above 25oC0.37 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252, TO-251 2.73 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, TO-251 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDD8882 FDD8882 TO-252AA 13” 12mm 2500 units FDU8882 FDU8882 TO-251AA N/A (Tube) N/A 75 units F F Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 35A, VGS = 10V - 0.0094 0.0115 Ω ID = 35A, VGS = 4.5V - 0.0130 0.0150 ID = 35A, VGS = 10V, TJ = 175 oC - 0.0150 0.0190 |
Codice articolo simile - FDD8882 |
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