STPS120L15TV datasheet(2/4 Pages) STMICROELECTRONICS

Il numero della parte	STPS120L15TV

Spiegazioni elettronici	LOW DROP OR-ing POWER SCHOTTKY DIODE

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

0.45

°C/W

Total

0.28

Rth (c)

Coupling

0.1

THERMAL RESISTANCES

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 100

°CVR = 5V

450

mA

Tj = 25

°CVR = 12V

22

mA

Tj = 100

°C

0.7

2.2

A

VF *

Forward voltage drop

Tj = 25

°CIF = 60 A

0.43

V

Tj = 125

°CIF = 60 A

0.27

0.31

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Pulse test :

* tp = 380

µs, δ <2%

To evaluate the conduction losses use the following equation :

P = 0.18 x IF(AV) + 2.2 10

-3 xI

F

2

(RMS)

0

102030

40506070

0

2

4

6

8

10

12

14

16

18

20

PF(av)(W)

T

δ=tp/T

tp

δ = 0.2

δ = 0.5

δ =1

δ = 0.05

δ = 0.1

IF(av)(A)

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

0

25

50

75

100

125

0

10

20

30

40

50

60

70

IF(av)(A)

Rth(j-a)=Rth(j-c)

Rth(j-a)=2.5

°C/W

Tamb(

°C)

T

δ=tp/T

tp

Fig. 2: Average forward current versus ambient

temperature (

δ =1) (per diode).

STPS120L15TV

2/4

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