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STPS120L15TV Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STPS120L15TV Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 4 page Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 0.45 °C/W Total 0.28 Rth (c) Coupling 0.1 THERMAL RESISTANCES Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 100 °CVR = 5V 450 mA Tj = 25 °CVR = 12V 22 mA Tj = 100 °C 0.7 2.2 A VF * Forward voltage drop Tj = 25 °CIF = 60 A 0.43 V Tj = 125 °CIF = 60 A 0.27 0.31 STATIC ELECTRICAL CHARACTERISTICS (per diode) Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P = 0.18 x IF(AV) + 2.2 10 -3 xI F 2 (RMS) 0 102030 40506070 0 2 4 6 8 10 12 14 16 18 20 PF(av)(W) T δ=tp/T tp δ = 0.2 δ = 0.5 δ =1 δ = 0.05 δ = 0.1 IF(av)(A) Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 0 10 20 30 40 50 60 70 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=2.5 °C/W Tamb( °C) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ =1) (per diode). STPS120L15TV 2/4 |
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