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STPS10150CT Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STPS10150CT Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 5 page STPS10150CT/CG 3/5 1E-3 1E-2 1E-1 1E+0 0 10 20 30 40 50 60 70 80 t(s) IM(A) Tc=50°C Tc=75°C Tc=125°C IM t δ=0.5 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 25 50 75 100 125 150 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 1E+5 VR(V) IR(µA) Tj=75°C Tj=25°C Tj=125°C Tj=150°C Tj=175°C Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) 1 2 5 10 20 50 100 200 10 20 50 100 200 VR(V) C(pF) F=1MHz Tj=25°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM Fig. 4: Normalized avalanche power derating versus junction temperature. 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM Fig. 3: Normalized avalanche power derating versus pulse duration. |
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