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STP9NK70Z Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STP9NK70Z
Spiegazioni elettronici  N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
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ABSOLUTE MAXIMUM RATINGS
(
l) Pulse width limited by safe operating area
(1) ISD ≤7.5A, di/dt ≤200 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Value
Unit
TO-220 /
D2PAK / I2PAK
TO-220FP
TO-247
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
700
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
7.5
7.5 (*)
7.5
A
ID
Drain Current (continuous) at TC = 100°C
4.7
4.7 (*)
4.7
A
IDM (l)
Drain Current (pulsed)
30
30 (*)
30
A
PTOT
Total Dissipation at TC = 25°C
115
35
156
W
Derating Factor
0.92
0.28
1.25
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I2PAK
D2PAK
TO-220FP
TO-247
Rthj-case
Thermal Resistance Junction-case Max
1.09
3.6
0.8
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
30
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
7.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
230
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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