FDS4435BZ_07 datasheet(4/6 Pages) FAIRCHILD

Il numero della parte	FDS4435BZ

Spiegazioni elettronici	P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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FDS4435BZ Rev.C

Figure 7.

0

5

10

15

20

25

30

0

2

4

6

8

10

I

D = -8.8A

VDD = -20V

VDD = -10V

Qg, GATE CHARGE(nC)

VDD = -15V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

1000

30

f = 1MHz

VGS = 0V

Crss

Coss

Ciss

-VDS, DRAIN TO SOURCE VOLTAGE (V)

4000

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

1

10

TJ = 25oC

TJ = 125oC

t

AV, TIME IN AVALANCHE(ms)

30

20

Unclamped Inductive

Switching Capability

Figure 10.

0

5

10

15

20

25

30

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

TJ = 25oC

TJ = 125oC

VDS = 0V

-VGS, GATE TO SOURCE VOLTAGE(V)

Gate Leakage Current vs Gate to

Source Voltage

Figure 11. Maximum Continuous Drain

Current vs Ambient Temperature

25

50

75

100

125

150

0

2

4

6

8

10

RθJA = 50

o

C/W

VGS = -4.5V

VGS = -10V

T

A

, AMBIENT TEMPERATURE

(

o

C

)

Figure 12.

0.1

1

10

0.01

0.1

1

10

100

100us

SINGLE PULSE

TJ = MAX RATED

RθJA = 125

o

C/W

TA = 25oC

THIS AREA IS

LIMITED BY r

DS(on)

80

10s

1ms

10ms

100ms

1s

DC

-VDS, DRAIN to SOURCE VOLTAGE (V)

Forward Bias Safe

Operating Area

Typical Characteristics T

J = 25°C unless otherwise noted

Codice articolo simile - FDS4435BZ_07

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
ON Semiconductor	FDS4435BZ-F085	416Kb / 7P	P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m September-2017,Rev.1
VBsemi Electronics Co.,...	FDS4435BZ-NL	1,004Kb / 9P	P-Channel 30-V (D-S) MOSFET

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
ON Semiconductor	FDS4435BZ-F085	416Kb / 7P	P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m September-2017,Rev.1
ON Semiconductor	FDS6673BZ-F085	510Kb / 6P	P-Channel PowerTrench짰 MOSFET -30V, -14.5A, 7.8m廓 September-2017, Rev. 2
Fairchild Semiconductor	FDS8858CZ	311Kb / 10P	Dual N & P-Channel PowerTrench짰 MOSFET N-Channel: 30V, 8.6A, 17.0m廓 P-Channel: -30V, -7.3A, 20.5m廓
ON Semiconductor	FDS8858CZ	543Kb / 11P	Dual N & P-Channel PowerTrench짰 MOSFETN-Channel: 30V, 8.6A, 17.0m廓 P-Channel: -30V, -7.3A, 20.5m廓 October-2017,Rev.3
Fairchild Semiconductor	FDB8160	329Kb / 7P	N-Channel PowerTrench짰 MOSFET 30V, 80A, 1.8m廓
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ON Semiconductor	FDS8984-F085	485Kb / 7P	N-Channel PowerTrench짰 MOSFET 30V, 7A, 23m廓 September-2017, Rev. 1
Fairchild Semiconductor	FDMS8662	210Kb / 7P	N-Channel PowerTrench짰 MOSFET 30V, 49A, 2.0m廓
Fairchild Semiconductor	FDD8870_F085	319Kb / 11P	N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓

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