STP80NF10 datasheet(1/9 Pages) STMICROELECTRONICS

Il numero della parte	STP80NF10

Spiegazioni elettronici	N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

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September 2002

STP80NF10

STP80NF10FP

N-CHANNEL 100V - 0.012

Ω - 80A TO-220/TO-220FP

LOW GATE CHARGE STripFET™II POWER MOSFET

(1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25°C, ID = 80A, VDD = 50V

s

TYPICAL RDS(on) = 0.012Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET series realized with STMicro-

electronics unique STripFET process has specifical-

ly been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters for Telecom and Computer application. It

is also intended for any application with low gate

charge drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

(*) Limited by Package

TYPE

VDSS

RDS(on)

ID

STP80NF10

STP80NF10FP

100 V

< 0.015

Ω

< 0.015

Ω

80 A

38 A

Symbol

Parameter

Value

Unit

STP80NF10

STP80NF10FP

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

±20

V

ID(*)

Drain Current (continuous) at TC = 25°C

80

38

A

ID

Drain Current (continuous) at TC = 100°C

66

27

A

IDM (l)

Drain Current (pulsed)

320

152

A

PTOT

Total Dissipation at TC = 25°C

300

45

W

Derating Factor

2

0.3

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

360

mJ

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tstg

Storage Temperature

– 55 to 175

°C

Tj

Max. Operating Junction Temperature

TO-220

1

2

3

1

2

3

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

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