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STD7NK40 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STD7NK40
Spiegazioni elettronici  N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD7NK40 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1 mA, VGS = 0
400
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2.7 A
0.85
1
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15 V, ID = 2.7 A
3.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
535
82
18
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
53
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 200 V, ID = 2.7 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
15
15
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 320V, ID = 5.4 A,
VGS = 10V
19
4
10
26
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 200 V, ID = 2.7A
RG =4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
30
12
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 320V, ID = 5.4A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
12
10
20
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
5.4
21.6
A
A
VSD (1)
Forward On Voltage
ISD = 5.4 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5.4 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
220
990
9
ns
nC
A


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