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SI1072X Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI1072X Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si1072X SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.2 V On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 58 A VGS = 10 V, ID = 1.3 A 0.077 0.077 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 1.2 A 0.104 0.107 Ω Forward Transconductance a gfs VDS = 15 V, ID = 1.3A 11 15 S Forward Voltage a VSD IS = 0.70 A 0.70 0.80 V Dynamic b Input Capacitance Ciss 328 280 Output Capacitance Coss 53 55 Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 25 35 pF VDS = 15 V, VGS = 10 V, ID = 1.3 A 4.8 5.5 Total Gate Charge Qg 2.5 2.7 Gate-Source Charge Qgs 1.1 1.1 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 1.3 A 0.80 0.80 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74197 S-71182 Rev. A, 18-Jun-07 |
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