SI1072X datasheet(2/4 Pages) VISHAY

Il numero della parte	SI1072X

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si1072X

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.2

V

On-State Drain Current

a

ID(on)

VDS = 5 V, VGS = 10 V

58

A

VGS = 10 V, ID = 1.3 A

0.077

Drain-Source On-State Resistance

a

rDS(on)

VGS = 4.5 V, ID = 1.2 A

0.104

0.107

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 1.3A

11

15

S

Forward Voltage

a

VSD

IS = 0.70 A

0.70

0.80

V

Dynamic

b

Input Capacitance

Ciss

328

280

Output Capacitance

Coss

53

55

Reverse Transfer Capacitance

Crss

VDS = 15 V, VGS = 0 V, f = 1 MHz

25

35

pF

VDS = 15 V, VGS = 10 V, ID = 1.3 A

4.8

5.5

Total Gate Charge

Qg

2.5

2.7

Gate-Source Charge

Qgs

1.1

Gate-Drain Charge

Qgd

VDS = 15 V, VGS = 4.5 V, ID = 1.3 A

0.80

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 74197

S-71182

Rev. A, 18-Jun-07

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