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STP3NA100FI Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STP3NA100FI
Spiegazioni elettronici  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3NA100FI Scheda tecnica(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
TO-220
ISOW ATT 220
Rthj-ca se
Thermal Resistance Junction-case
Max
1.14
2. 78
oC/W
Rthj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62. 5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max,
δ <1%)
3.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
170
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
µAVGS =0
1000
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
25
250
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
µA
2.25
3
3.75
V
RDS(on)
St atic Drain-source On
Resistance
VGS =10V
ID = 1.5 A
4.3
5
Ω
ID(o n)
On St ate Drain Current
VDS >ID(on) xRDS(on) max
VGS =10 V
3. 5
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconduct ance
VDS >ID(on) xRDS(on) max
ID =1.5 A
1. 5
3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
1100
85
20
1430
110
30
pF
pF
pF
STP3NA100/FI
2/9


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