Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

STP20N10L Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STP20N10L
Spiegazioni elettronici  N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20N10L Scheda tecnica(HTML) 2 Page - STMicroelectronics

  STP20N10L Datasheet HTML 1Page - STMicroelectronics STP20N10L Datasheet HTML 2Page - STMicroelectronics STP20N10L Datasheet HTML 3Page - STMicroelectronics STP20N10L Datasheet HTML 4Page - STMicroelectronics STP20N10L Datasheet HTML 5Page - STMicroelectronics STP20N10L Datasheet HTML 6Page - STMicroelectronics STP20N10L Datasheet HTML 7Page - STMicroelectronics STP20N10L Datasheet HTML 8Page - STMicroelectronics STP20N10L Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
THERMAL DATA
TO-220
ISOWATT220
Rthj-case
Thermal Resist ance Junct ion-case
Max
1.43
3. 75
oC/W
Rthj-amb
Rthc- sink
Tl
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
20
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, ID =IAR,VDD =25 V)
120
mJ
EAR
Repet itive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
30
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
oC, pulse width limited by Tj max,
δ <1%)
14
A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS = 0
100
V
IDS S
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 15 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =250
µA1
1.6
2.5
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =5 V
ID = 10 A
0.09
0. 12
ID(on)
On St ate Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
20
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID =10 A
10
16
S
Ciss
Coss
Crss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1200
250
60
1500
350
90
pF
pF
pF
STP20N10L/FI
2/10


Codice articolo simile - STP20N10L

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Inchange Semiconductor ...
STP20N10L ISC-STP20N10L Datasheet
301Kb / 2P
   isc N-Channel MOSFET Transistor
logo
VBsemi Electronics Co.,...
STP20N10L VBSEMI-STP20N10L Datasheet
939Kb / 7P
   N-Channel 100-V (D-S) MOSFET
More results

Descrizione simile - STP20N10L

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
STP21N05L STMICROELECTRONICS-STP21N05L Datasheet
197Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STK12N05L STMICROELECTRONICS-STK12N05L Datasheet
180Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD12N05L STMICROELECTRONICS-STD12N05L Datasheet
176Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP50N06L STMICROELECTRONICS-STP50N06L Datasheet
199Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP55N06L STMICROELECTRONICS-STP55N06L Datasheet
213Kb / 7P
   N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD17N05L STMICROELECTRONICS-STD17N05L Datasheet
172Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD8N10L STMICROELECTRONICS-STD8N10L Datasheet
381Kb / 9P
   N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD15N06L STMICROELECTRONICS-STD15N06L Datasheet
140Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP21N06L STMICROELECTRONICS-STP21N06L Datasheet
197Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP19N06L STMICROELECTRONICS-STP19N06L Datasheet
142Kb / 7P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com