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M40ZTHSMH6E Scheda tecnica(PDF) 10 Page - STMicroelectronics |
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M40ZTHSMH6E Scheda tecnica(HTML) 10 Page - STMicroelectronics |
10 / 21 page Operation M40Z111, M40Z111W 10/21 Table 2. Power down/up AC characteristics 2.2 VCC noise and negative going transients ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in Figure 6) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recommends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Symbol Parameter(1) 1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted). Min Max Unit tF (2) 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC passes VPFD (min). VPFD (max) to VPFD (min) VCC fall time 300 µs tFB (3) 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. VPFD (min) to VSS VCC fall time 10 µs tR VPFD (min) to VPFD (max) VCC rise time 10 µs tRB VSS to VPFD (min) VCC rise time 1 µs tEDL Chip enable propagation delay M40Z111 15 ns M40Z111W 20 ns tEDH Chip enable propagation delay M40Z111 10 ns M40Z111W 20 ns tER (4) 4. tER (min) = 20ms for industrial temperature range - grade 6 device. Chip enable recovery 40 200 ms tWPT Write protect time M40Z111 40 150 µs M40Z111W 40 250 µs |
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