Motore di ricerca datesheet componenti elettronici |
|
STB15NK50ZT4 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
|
STB15NK50ZT4 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 14 page 3/14 STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 100µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 7 A 0.30 0.34 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15V, ID =7 A 12 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 2260 264 64 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 400V 150 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =250 V, ID =7 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 20 23 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =400V, ID =14 A, VGS =10V 76 15 40 106 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 250 V, ID =7 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 62 15 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 400V, ID =14A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 13 11 28 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 14 56 A A VSD (1) Forward On Voltage ISD =14A,VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100A/µs VDD =29V, Tj = 150°C (see test circuit, Figure 5) 428 4.2 20 ns µC A |
Codice articolo simile - STB15NK50ZT4 |
|
Descrizione simile - STB15NK50ZT4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |