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STP16NE06L Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STP16NE06L Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 7 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on T ime Rise Time VDD =30 V ID =8 A RG =4.7 W VGS =5V ns ns Qg Qgs Qgd Total Gat e Charge Gate-Source Charge Gate-Drain Charge VDD =40 V ID =16 A VGS =5 V nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall T ime Cross-over T ime VDD =48 V ID =16 A RG =4.7 Ω VGS =5 V ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) A A VSD ( ∗)Forward On Voltage ISD =16 A VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A di/ dt = 100 A/ µs VDD =30 V Tj = 150 oC ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STP16NE06L/FP 3/7 |
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