STGW50NB60H datasheet(1/5 Pages) STMICROELECTRONICS

Il numero della parte	STGW50NB60H

Spiegazioni elettronici	N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT

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STGW50NB60H

N-CHANNEL 50A - 600V TO-247

PowerMESH

™ IGBT

PRELIMINARY DATA

s

HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s

LOW ON-VOLTAGE DROP (VCESAT)

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

VERY HIGH FREQUENCY OPERATION

s

OFF LOSSES INCLUDE TAIL CURRENT

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

PowerMESH

™

IGBTs,

with

outstanding

perfomances. The suffix "H" identifies a family

optimized to achieve very low switching times for

high frequency applications (<120kHz).

APPLICATIONS

s

HIGH FREQUENCY MOTOR CONTROLS

s

WELDING EQUIPMENTS

s

SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS = 0)

600

V

VECR

Emitter-Collector Voltage

20

V

VGE

Gate-Emitter Voltage

± 20

V

IC

Collector Current (continuous) at Tc = 25

oC100

A

IC

Collector Current (continuous) at Tc = 100

oC50

A

ICM(

•)

Collector Current (pulsed)

400

A

Ptot

Total Dissipation at Tc = 25

oC250

W

Derating Factor

2

W/

o C

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

TYPE

VCES

VCE(sat)

IC

STGW50NB60H

600 V

< 2.8 V

50 A

June 1999

1

2

3

TO-247

1/5

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