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STD7NB20-1 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD7NB20-1 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STD7NB20 / STD7NB20-1 Thermal Impedance ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 100 V, ID = 5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 10 14 ns tr Rise Time 15 20 ns Qg Total Gate Charge VDD = 160V, ID = 10 A, VGS = 10V 17 24 nC Qgs Gate-Source Charge 7.5 nC Qgd Gate-Drain Charge 5.5 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-Voltage Rise Time Fall Time Cross-over Time VDD = 160V, ID = 10 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 8 10 20 11 14 28 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 7 A ISDM (2) Source-drain Current (pulsed) 28 A VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 10 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 170 ns Qrr Reverse Recovery Charge 980 nC IRRM Reverse Recovery Current 11.5 A Safe Operating Area |
Codice articolo simile - STD7NB20-1 |
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