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STD7NB20-1 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STD7NB20-1
Spiegazioni elettronici  N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH??MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD7NB20-1 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STD7NB20 / STD7NB20-1
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 100 V, ID = 5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
10
14
ns
tr
Rise Time
15
20
ns
Qg
Total Gate Charge
VDD = 160V, ID = 10 A,
VGS = 10V
17
24
nC
Qgs
Gate-Source Charge
7.5
nC
Qgd
Gate-Drain Charge
5.5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
VDD = 160V, ID = 10 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
8
10
20
11
14
28
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
7
A
ISDM (2)
Source-drain Current (pulsed)
28
A
VSD (1)
Forward On Voltage
ISD = 7 A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 10 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
170
ns
Qrr
Reverse Recovery Charge
980
nC
IRRM
Reverse Recovery Current
11.5
A
Safe Operating Area


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