Motore di ricerca datesheet componenti elettronici |
|
STD5NE10L Scheda tecnica(PDF) 3 Page - STMicroelectronics |
|
STD5NE10L Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit td(on) tr Turn-on Time Rise Time VDD =50 V I D =2.5 A RG =4.7 Ω VGS =5 V 7 17 9 22 ns ns Qg Q gs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD =80 V ID =5 A VGS =5 V 10 5 4 14 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. T yp. Max. Unit tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD =80 V ID =5 A RG =4.7 Ω VGS =10 V 8 9 19 10 12 25 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. T yp. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 5 20 A A VSD ( ∗) Forward On Volt age ISD =8 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =5 A di/dt = 100 A/ µs VDD =30 V T j =150 oC 75 190 5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STD5NE10L 3/5 |
Codice articolo simile - STD5NE10L |
|
Descrizione simile - STD5NE10L |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |