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STD2NB80 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD2NB80 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit td(on) tr Turn-on delay Time Rise Time VDD = 400 V ID =1.5 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 12 10 ns ns Qg Q gs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 640 V ID =3 A VGS =10 V 17 6.5 7.5 24 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. T yp. Max. Unit tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD = 640 V ID =3 A RG =4.7 Ω VGS =10 V (see test circuit, figure 5) 15 17 22 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. T yp. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 1. 9 7. 6 A A VSD ( ∗) Forward On Volt age ISD =1.9 A VGS =0 1. 6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =2.6 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC (see test circuit, figure 5) 650 2.8 8.5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STD2NB80 3/9 |
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