STGB19NC60KDT4 datasheet(6/17 Pages) STMICROELECTRONICS

Il numero della parte	STGB19NC60KDT4

Spiegazioni elettronici	20 A - 600 V - short circuit rugged IGBT

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Electrical characteristics

STGB19NC60KD - STGF19NC60KD - STGP19NC60KD

6/17

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

Forward on-voltage

IF = 12 A

IF = 12 A, Tc = 125 °C

1.9

1.6

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 12 A,VR = 40 V,

di/dt = 100 A/

µs

(see Figure 21)

31

30

2

ns

nC

A

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 12 A,VR = 40 V,

Tc =125 °C, di/dt = 100 A/µs

(see Figure 21)

50

70

4

ns

nC

A

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STMicroelectronics	STGB19NC60K	524Kb / 15P	20 A - 600 V - short circuit rugged IGBT
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