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2N2222A Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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2N2222A Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 7 page THERMAL DATA TO-39 TO-18 Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 50 187.5 83.3 300 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 60 V VCB = 60 V Tj = 150 oC 10 10 nA µA ICEX Collector Cut-off Current (VBE = -3V) VCE = 60 V 10 nA IBEX Base Cut-off Current (VBE = -3V) VCE = 60 V 20 nA IEBO Emitter Cut-off Current (IC = 0) VEB = 3 V 10 nA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 10 µA 75 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 40 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 µA 6V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA 0.3 1 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA 0.6 1.2 2 V V hFE ∗ DC Current Gain IC = 0.1 mA VCE = 10 V IC = 1 mA VCE = 10 V IC = 10 mA VCE = 10 V IC = 150 mA VCE = 10 V IC = 500 mA VCE = 10 V IC = 150 mA VCE = 1 V IC = 10 mA VCE = 10 V Tamb = -55 oC 35 50 75 100 40 50 35 300 hfe ∗ Small Signal Current Gain IC = 1 mA VCE = 10 V f = 1KHz IC = 10 mA VCE = 10 V f = 1KHz 50 75 300 375 fT Transition Frequency IC = 20 mA VCE = 20 V f = 100 MHz 300 MHz CEBO Emitter-Base Capacitance IC = 0 VEB = 0.5 V f = 100KHz 25 pF CCBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 100 KHz 8 pF Re(hie) Real Part of Input Impedance IC = 20 mA VCE = 20 V f = 300MHz 60 Ω * Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2N2219A / 2N2222A 2/7 |
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