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STB60N06-14 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB60N06-14
Spiegazioni elettronici  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB60N06-14 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 25 V
ID = 30 A
RG = 4.7
Ω
VGS = 10 V
30
180
50
250
ns
ns
(di/dt)on
Turn-on Current Slope
VDD = 40 V
ID = 60 A
RG = 47
Ω
VGS = 10 V
210
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 40 V
ID = 60 A
VGS = 10 V
130
26
55
170
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 40 V
ID = 60 A
RG = 4.7
Ω
VGS = 10 V
35
135
180
50
190
250
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
VSD (
∗)
Forward On Voltage
ISD = 60 A
VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 60 A
di/dt = 100 A/
µs
VDD = 30 V
Tj = 150
o C
150
0.56
9
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STB60N06-14
3/6


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