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FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• Small size
• High Speed
• Low cost
SYMBOL
PARAMETER
MIN
MAX
UNITS
M
Gain
350
TSTG
Storage Temperature
-55
+70
°C
TO
Operating Temperature
+1
+40
°C
TS
Soldering Temperature*
+240
°C
VTEC
TEC voltage
1.5
V
ITEC
TEC Current
2.0
A
P
APD Die Power Diss.
0.2
W
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
6
18
nA
CJ
Junction Capacitance
f = 1 MHz
25
pF
IN
Noise Current Spectral Density f = 100 kHz
0.8
1.5
pA/
√Hz
lrange
Spectral Application Range
Spot Scan
350
1050
nm
R
Responsivity
l= 500nm, VR = 0 V
35
A/W
Vop
Operating voltage
1700
2000
V
tr
Response Time**
RL = 50
Ω, l= 675nm
10
15
nS
IQTEC
TEC Quiescent Current
Case Temp = 35 °C
0.85
A
Cooled Large Area Blue Silicon Avalanche Photodiode
SD 197-70-74-591
The SD 197-70-74-591 is a cooled large area silicon
avalanche photodiode (APD) that provides high gain
and low noise, in a hermetic TO-66 package.
• Military
• Industrial
• Medical
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 830nm wavelength light.
All specifications are with the APD internally cooled to 0°C and a gain of 300.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SCHEMATIC
Mechanical Dimension in inches
SPECTRAL RESPONSE M = 300
0
20
40
60
80
100
120
140
Wavelength (nm)
0
20
40
60
80
100
120
140
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