2N4401 datasheet(2/4 Pages) TAITRON

Il numero della parte	2N4401

Spiegazioni elettronici	Small Signal General Purpose Transistors (NPN)

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Produttore elettronici	TAITRON [TAITRON Components Incorporated]

Homepage	http://www.taitroncomponents.com

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2 / 4 page

Rev. A/AH 2008-03-05

2N4400/2N4401

Small Signal General Purpose Transistors (NPN)

www.taitroncomponents.com

Page 2 of 4

Electrical Characteristics (T

Ambient=25ºC unless noted otherwise)

2N4400

2N4401

Symbol

Description

Min.

Max.

Min.

Max.

Unit

Conditions

V(BR)CBO

Collector-Base Breakdown Voltage

60

-

60

-

V

IC=100µA, IE=0

V(BR)CEO*

Collector-Emitter Breakdown Voltage

40

-

40

-

V

IC=1mA, IB=0

V(BR)EBO

Emitter-Base Breakdown Voltage

6.0

-

6.0

-

V

IE=100µA, IC=0

-

0.40

-

0.40

IC=150mA, IB=15mA

VCE(sat) *

Collector Emitter Saturation Voltage

-

0.75

-

0.75

V

IC=500mA, IB=50mA

0.75

0.95

0.75

0.95

IC=150mA, IB=15mA

VBE(sat) *

Base Emitter Saturation Voltage

-

1.20

-

1.20

V

IC=500mA, IB=50mA

ICEV

Collector Cut–Off Current

-

100

-

100

nA

VEB=0.4V, VCE=35V

IBEV

Base Cut–Off Current

-

100

-

100

nA

VEB=0.4V, VCE=35V

-

20

-

VCE=1V, IC=0.1mA

20

-

40

-

VCE=1V, IC=1mA

40

-

80

-

VCE=1V, IC=10mA

50

150

100

300

VCE=1V, IC=150mA

hFE*

D.C. Current Gain

20

-

40

-

VCE=2V, IC=500mA

hie

Input Impedance

0.5

7.5

1.0

15

kΩ

VCE=10V, IC=1mA

f=1KHz,

hre

Voltage Feedback Ratio

0.1

8.0

0.1

8.0

x10

־

4

VCE=10V, IC=1mA

f=1KHz,

fT

Current Gain-Bandwidth Product

200

-

250

-

MHz

VCE=10V, IC=20mA,

f=100MHz

CCBO

Collector-Base Capacitance

-

6.5

-

6.5

pF

VCB=5V, IE=0

f=100KHz,

CEBO

Emitter-Base Capacitance

-

30

-

30

pF

VEB=0.5V, IC=0

f=100KHz,

hfe

Small Signal Current Gain

20

250

40

500

VCE=10V, IC=1mA

f=1KHz,

hoe

Output Admittance

1.0

30

1.0

30

μS

VCE=10V, IC=1mA

f=1KHz,

td

Delay Time

-

15

-

15

nS

tr

Rise Time

-

20

-

20

nS

VCC=30V, VEB=2V

IC=150mA, IB1=15mA

ts

Storage Time

-

225

-

225

nS

tf

Fall Time

-

30

-

30

nS

VCC=30V, IC=150mA

IB1=IB2=15mA

*

Pulse Test: Pulse Width<300µs, Duty Cycle<2%

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