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L6384E Scheda tecnica(PDF) 8 Page - STMicroelectronics

Il numero della parte L6384E
Spiegazioni elettronici  High-voltage half bridge driver
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
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Bootstrap driver
L6384E
8/17
4
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6384E a patented
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with in series a diode, as shown in
Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage. The
diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
4.1
CBOOT selection and charging
To choose the proper CBOOT value the external MOS can be seen as an equivalent
capacitor. This capacitor CEXT is related to the MOS total gate charge:
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss.
It has to be:
CBOOT>>>CEXT
e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also
the leakage losses.
e.g.: HVG steady state consumption is lower than 200
µA, so if HVG T
ON is 5ms, CBOOT has
to supply 1
µC to C
EXT. This charge on a 1µF capacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the
LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125
Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it must be
taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.
C
EXT
Q
gate
V
gate
---------------
=
V
drop
I
ch
e
arg Rdson
V
drop
Q
gate
T
ch
e
arg
-------------------R
dson
==


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