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BC337-25RL1 Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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BC337-25RL1 Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 6 1 Publication Order Number: BC337/D BC337, BC337−25, BC337−40 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION COLLECTOR 1 2 BASE 3 EMITTER MARKING DIAGRAM BC33 7−xx AYWW G G BC337−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO−92 CASE 29 STYLE 17 |
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