STB12NM50FD-1 datasheet(3/18 Pages) STMICROELECTRONICS

Il numero della parte	STB12NM50FD-1

Spiegazioni elettronici	N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

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STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD

Electrical ratings

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1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/

D²/I²PAK

TO-220FP

TO-247

VDS

Drain-source voltage (VGS = 0)

500

V

VDGR

Drain-gate voltage (RGS = 20KΩ)500

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25°C

12

12(1)

1.

Limited only by maximum temperature allowed

14

A

ID

Drain current (continuous) at TC=100°C

7.5

7.5(1)

8.8

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

48

48 (1)

56

A

PTOT

Total dissipation at TC = 25°C

160

35

160

W

Derating factor

1.28

0.28

1.4

W/°C

dv/dt(3)

3.

ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

20

V/ns

VISO

Insulation withstand voltage (DC)

--

2500

--

V

TJ

Tstg

Operating junction temperature

Storage temperature

-65 to 150

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

TO-220

I²PAK

D²PAK TO-220FP TO-247

Rthj-case Thermal resistance junction-case Max

0.78

3.57

0.77

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

100

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

6A

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

400

mJ

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