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2SA1603A Scheda tecnica(PDF) 1 Page - Isahaya Electronics Corporation |
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2SA1603A Scheda tecnica(HTML) 1 Page - Isahaya Electronics Corporation |
1 / 2 page DESCRIPTION 2SA1603A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. ※) It shows hFE classification in below table. 〈SMALL-SIGNAL TRANSISTOR〉 2SA1603A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) OUTLINE DRAWING Unit:mm MAXIMUM RATINGS(Ta=25℃) Symbol Parameter Ratings Unit V CBO Collector to Base voltage -60 V V CEO Collector to Emitter voltage -50 V V EBO Emitter to Base voltage -6 V I O Collector current -150 mA P c Collector dissipation 200 mW T j Junction temperature +150 ℃ T stg Storage temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃) Limits Parameter Symbol Test conditions Min Typ Max Unit C to E break down voltage V(BR)CEO I C=-100μA ,R BE=∞ -50 - - V Collector cut off current ICBO V CB=--60V, I E=0mA - - -0.1 μA Emitter cut off current IEBO V EB=-6V, I C=0mA - - -0.1 μA DC forward current gain hFE V CE=-6V, I C=-1mA ※ 120 - 560 DC forward current gain hFE V CE=-6V, I C=-0.1mA 70 - - C to E Saturation Vlotage VCE(sat) I C=-30mA ,IB=-1.5mA - - -0.3 V Gain bandwidth product fT V CE=-6V, I E=10mA - 200 - MHz Collector output capacitance Cob V CB=-6V, I E=0,f=1MHz - 2.5 - pF JEITA:SC-70 TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR 0.425 1.25 0.425 2.1 ① ② ③ ISAHAYA ELECTRONICS CORPORATION Item Q R S hFE Item 120~270 180~390 270~560 |
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