SI3455DV datasheet(1/5 Pages) VISHAY

Il numero della parte	SI3455DV

Spiegazioni elettronici	P-Channel 30-V (D-S) MOSFET

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FEATURES

D TrenchFETr Power MOSFET

D Lead (Pb)-Free Version is RoHS

Compliant

Available

Si3455DV

Vishay Siliconix

Document Number: 70194

S-50694—Rev. E, 18-Apr-05

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

30

0.100 @ VGS = −10 V

"3.5

−30

0.190 @ VGS = −4.5 V

"2.5

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

Ordering Information: Si3455DV-T1

Si3455DV-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

−30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

"3.5

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

"2.7

A

Pulsed Drain Current

IDM

"20

A

Continuous Source Current (Diode Conduction)a

IS

−1.7

Maximum Power Dissipationa

TA = 25_C

PD

2.0

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

_C/W

Notes

a.

Surface Mounted on FR4 Board, t v 5 sec.

For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm

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