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STB15NM60N Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STB15NM60N Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N Electrical characteristics 5/18 Table 6. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300V, ID = 7A, RG = 4.7Ω, VGS = 10V (see Figure 17) 12 14 80 30 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 14 56 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 14A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =14A, di/dt =100A/µs, VDD = 100V, Tj = 25°C (see Figure 19) 390 5 25 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100V di/dt =100A/µs, ISD = 14A Tj = 150°C (see Figure 19) 500 7 25 ns µC A |
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