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TSD57060-01 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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TSD57060-01 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 8 page SD57060-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s EXCELLENT THERMAL STABILITY s COMMON SOURCE CONFIGURATION s POUT = 60 W with 11.5 dB gain @ 945 MHz s BeO FREE PACKAGE DESCRIPTION The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity. PIN CONNECTION January 2000 ABSOLUTE MAXIMUM RATINGS (Tcase =25 oC) Symbol Parameter Val ue Uni t V(BR)DSS Drain Source Voltage 65 V VGS Gat e-Source Volt age ± 20 V ID Drain Current 7 A PDISS Power Dissipation (@ Tc= 70 oC) 118 W Tj Max. O perating Junction Temperature 200 oC TSTG Storage T emperat ure -65 to 150 oC THERMAL DATA (Tcase =70 oC) Rth (j-c) Rth(c -s)* Junction-Case Thermal Resistance Case-Heatsink T hermal Resist ance 1.1 0.5 oC/W oC/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). M250 epoxy sealed ® ORDER CODE BRANDING SD57060-01 TSD57060-01 1. Drain 3.Source 2. Gate 1/8 |
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