STE250NS10_06 datasheet(4/12 Pages) STMICROELECTRONICS

Il numero della parte	STE250NS10

Spiegazioni elettronici	N-channel 100V - 0.0045廓 - 220A - ISOTOP STripFET??Power MOSFET

Download	12 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

4 / 12 page

Electrical characteristics

STE250NS10

4/12

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 1 mA, VGS = 0

100

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

50

µA

VDS= Max rating,

TC=125°C

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±400

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 125A

0.0045 0.0055

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

Forward transconductance

VDS = 20V, ID=70A

60

S

Ciss

Input capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

31

nF

Coss

Output capacitance

4.3

nF

Crss

Reverse transfer

capacitance

1.2

nF

Qg

Total gate charge

VDD = 50V, ID = 22A,

VGS = 10V

900

nC

Qgs

Gate-source charge

160

nC

Qgd

Gate-drain charge

330

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD=50 V, ID=125A,

RG=4.7Ω, VGS= 10V

(see Figure 13)

110

380

ns

td(off)

tf

Turn-off-delay time

Fall time

VDD=50 V, ID=125A,

RG=4.7Ω, VGS= 10V

(see Figure 13)

1100

300

ns

tr(Voff)

tf

tc

Off-voltage rise time

fall time

cross-over time

VDD=80V, ID=220A,

RG=4.7Ω, VGS=10V

(see Figure 15)

950

330

600

ns

Codice articolo simile - STE250NS10_06

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STE250NS10	297Kb / 8P	N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET

More results

Descrizione simile - STE250NS10_06

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STE250NS10	297Kb / 8P	N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET
	STE180NE10	247Kb / 12P	N-channel 100V - 4.5m廓 - 180A - ISOTOP STripFET??Power MOSFET
	STE180NE10	89Kb / 8P	N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET
	STB50NE10	412Kb / 13P	N-channel 100V - 0.021廓 - 50A - D2PAK STripFET??Power MOSFET
	STD100N3LF3	337Kb / 14P	N-channel 30 V, 0.0045 廓, 80 A, DPAK planar STripFET??II Power MOSFET
	STQ1NE10L	283Kb / 13P	N-channel 100V - 0.3廓 - 1A - TO-92 STripFET??Power MOSFET
	STN2NF10	248Kb / 13P	N-channel 100V - 0.23廓 - 2.4A - SOT-223 STripFET??II Power MOSFET
	STL15N3LLH5	157Kb / 10P	N-channel 30 V, 0.0045 廓, 15 A, PowerFLAT??(3.3 x 3.3) STripFET??V Power MOSFET
	STD100N03L-1	240Kb / 14P	N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET
	STE180N10	85Kb / 8P	N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET

More results

STE250NS10 Scheda tecnica(PDF) 4 Page - STMicroelectronics

STE250NS10 Scheda tecnica(HTML) 4 Page - STMicroelectronics

Codice articolo simile - STE250NS10_06

Descrizione simile - STE250NS10_06

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Scheda tecnica Scarica

Link URL