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STGW30NC60WD Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STGW30NC60WD Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 14 page STGW30NC60WD Electrical ratings 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC Collector current (continuous) at 25°C 60 A IC Collector current (continuous) at 100°C 30 A ICM (1) 1. Pulse width limited by max junction temperature Collector current (pulsed) 200 A VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25°C 200 W Tstg Storage temperature – 55 to 150 °C Tj Operating junction temperature TL Maximum lead temperature for soldering purpose (1.6mm from case, for 10 sec.) 300 °C Table 3. Thermal resistance Symbol Parameter Min. Typ. Max. Unit Rthj-case Thermal resistance junction-case 0.625 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W |
Codice articolo simile - STGW30NC60WD_07 |
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