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STYN1010S Scheda tecnica(PDF) 1 Page - Sirectifier Semiconductors |
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STYN1010S Scheda tecnica(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page STYN210(S) thru STYN1010(S) Discrete Thyristors(SCRs) Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB G A K A K G ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C 10 A IT(AV) Average on-state current (180° conduction angle) Tc = 100°C 6.4 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 105 A tp = 10 ms 100 I ²t I ²t Value tp = 10 ms A2S dI/dt Critical rate of rise of on-state current 50 A/µs Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C Tl Maximum lead soldering temperature during 10s at 4.5mm from case Dimensions TO-263(D 2PAK) 1. Gate 2. Collector 3. Emitter 4. Collector Botton Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .315 .350 E 9.65 10.29 .380 .405 E1 6.22 8.13 .245 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.20 0 .008 R 0.46 0.74 .018 .029 K A 50 Gate supply:IG = 100mA dIG/dt = 1A/µs 260 °C TYN 210 410 610 810 1010 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 200 400 600 800 1000 V G |
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