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BTB08 Scheda tecnica(PDF) 1 Page - Sirectifier Semiconductors

Il numero della parte BTB08
Spiegazioni elettronici  Discrete Triacs(Non-Isolated/Isolated)
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Produttore elettronici  SIRECTIFIER [Sirectifier Semiconductors]
Homepage  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

BTB08 Scheda tecnica(HTML) 1 Page - Sirectifier Semiconductors

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BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
TO-220AB
Tc = 110°C
8
A
ITSM
Non repetit
ive surge peak on-state
current (full cycle
, Tj initial = 25°C)
F = 60 Hz
t = 16.7 ms
84
A
F = 50 Hz
t = 20 ms
80
I²t
I²
t Value for fusing
tp = 10 ms
36
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x I GT , tr < 100 ns
F = 120 Hz
Tj = 125
°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV)
Average gate p ower diss ipation
Tj = 125
°C
1
W
Tstg
Tj
Storage junction tempe
rature range
Operating junction temperature
range
- 4
0 to + 150
- 40 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB
Unit
CW
BW
IGT (1)
VD = 12 V
RL = 30
I - II - III
MAX.
35
50
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 k
Tj = 125°C
I - II - III
MIN.
0.2
V
IH (2)
IT = 100 mA
MAX.
35
50
mA
IL
IG = 1.2 IGT
I - III
MAX.
50
70
mA
II
60
80
dV/dt (2)
VD = 67 % VDRM gate open Tj = 125°C
MIN.
400
1000
V/µs
(dI/dt)c (2) Without snubber
Tj = 125°C
MIN.
7
A/ms
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min.
Max.
12.70
13.97
14.73
16.00
9.91
10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500
0.550
0.580
0.630
0.390
0.420
0.139
0.161
0.230
0.270
0.100
0.125
0.045
0.065
0.110
0.230
0.025
0.040
0.100
BSC
0.170
0.190
0.045
0.055
0.014
0.022
0.090
0.110
Dimensions TO-220AB
G
T2
T1
T2
T1
G
Symbol
4.5
_


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