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STP12NM50FP Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP12NM50FP
Spiegazioni elettronici  N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STP12NM50FP Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Electrical ratings
3/17
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220-
/D²PAK/I²PAK
TO-220FP
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
12
12(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC=100°C
7.5
7.5(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
48
48(1)
A
PTOT
Total dissipation at TC = 25°C
160
35
W
Derating Factor
1.28
0.28
W/°C
VISO
Insulation winthstand voltage (DC)
--
2500
V
dv/dt(3)
3.
ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
TJ
Tstg
Operating junction temperature
Storage temperature
-65 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220/D²PAK/
I² PAK
TO-220FP
Rthj-case
Thermal resistance junction-case Max
0.78
3.57
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
6A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
400
mJ


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