SI1029X datasheet(4/8 Pages) VISHAY

Il numero della parte	SI1029X

Spiegazioni elettronici	Complementary N- and P-Channel 60-V (D-S) MOSFET

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Document Number: 71435

S-80643-Rev. B, 24-Mar-08

Vishay Siliconix

Si1029X

N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

1.2

1.5

1

100

1000

0.00

0.3

0.6

0.9

TJ = 25 °C

TJ = 125 °C

VSD -Source-to-Drain Voltage (V)

10

TJ = - 55 °C

VGS = 0 V

On-Resistance vs. Gate-to-Source Voltage

0

1

2

3

4

5

0246

8

10

VGS - Gate-to-Source Voltage (V)

ID = 500 mA

ID = 200 mA

Threshold Voltage Variance Over Temperature

-0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ -Junction Temperature (°C)

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