SI4420BDY datasheet(1/6 Pages) VISHAY

Il numero della parte	SI4420BDY

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4420BDY

New Product

Document Number: 73067

S-61013-Rev. B, 12-Jun-06

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)ID (A)

30

0.0085 at VGS = 10 V

13.5

0.0110 at VGS = 4.5 V

11

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free)

D

G

S

N-Channel MOSFET

Notes:

a. Surface Mounted on FR4 Board, t

≤ 10 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 sec

Steady State

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

13.5

9.5

A

TA = 70 °C

10.8

7.5

Pulsed Drain Current

IDM

50

Continuous Source Current (Diode Conduction)a

IS

2.3

1.26

Single Pulse Avalanche Current

L = 0.1 mH

IAS

20

Avalanche Energy

EAS

20

mJ

Maximum Power Dissipationa

TA = 25 °C

PD

2.5

1.4

W

TA = 70 °C

1.6

0.9

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

< 10 sec

RthJA

40

50

°C/W

Steady State

70

90

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

23

28

RoHS

COMPLIANT

Pb-free

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