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STYNX55 Scheda tecnica(PDF) 2 Page - SEMPO ELECTRONIC Limited |
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STYNX55 Scheda tecnica(HTML) 2 Page - SEMPO ELECTRONIC Limited |
2 / 2 page STYN255 thru STYN855 Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES Symbol Test Conditions TYNx08(S) Unit IGT VD = 12 V RL = 33 W MIN. 8 mA MAX. 80 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kW Tj = 125°C MIN. 0.2 V IH IT = 500mA Gate open MAX. 150 mA IL IG = 1.2 IGT MAX. 200 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 100 A tp = 380 µs Tj = 25°C MAX. 1.9 V Vt0 Threshold voltage Tj = 125° C MAX. 1.0 V Rd Dynamic resistance Tj = 125°C MAX. 8.5 mW IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 10 µA Tj = 125°C 5 mA Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 0.9 °C/W Rth(j-a) Junction to ambient (DC) 50 °C/W S= copper surface under tab PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Package 200~~800 STYN x55 80 mA TO-247AD OTHER INFORMATION Note: x = voltage Part Number Marking Weight Base Quantity Packing mode 4.5 g 120 B ulk STYN x55 STYN x55 . |
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