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IRFBL12N50A Scheda tecnica(PDF) 6 Page - International Rectifier

Il numero della parte IRFBL12N50A
Spiegazioni elettronici  HEXFET짰 Power MOSFET
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFBL12N50A Scheda tecnica(HTML) 6 Page - International Rectifier

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IRFBL12N50A
6
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QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
µF
50K
Ω
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (B R)DSS
I AS
R G
IAS
0.01
Ω
tp
D.U.T
L
V DS
+
-
VDD
DRIV E R
A
15 V
20V
25
50
75
100
125
150
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
J
°
ID
TOP
BOTTOM
5.8A
8.2A
13A
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
580
600
620
640
660
0
246
8
1 0
1 2
1 4
A
av
I
, A v ala nc he C urre nt (A)


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