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IRFP3077PBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRFP3077PBF
Spiegazioni elettronici  HEXFET Power MOSFET
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFP3077PBF Scheda tecnica(HTML) 2 Page - International Rectifier

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IRFP3077PbF
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Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.028mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value .
„ ISD ≤ 75A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
S
D
G
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.091 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.8
3.3
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Gate Input Resistance
–––
1.2
–––
Ω
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
160
–––
–––
S
Qg
Total Gate Charge
–––
160
220
nC
Qgs
Gate-to-Source Charge
–––
37
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
42
–––
td(on)
Turn-On Delay Time
–––
25
–––
ns
tr
Rise Time
–––87–––
td(off)
Turn-Off Delay Time
–––
69
–––
tf
Fall Time
–––
95
–––
Ciss
Input Capacitance
–––
9400
–––
pF
Coss
Output Capacitance
–––
820
–––
Crss
Reverse Transfer Capacitance
–––
350
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)i –––1090–––
Coss eff. (TR) Effective Output Capacitance (Time Related)h
–––1260–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 200™
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
850
(Body Diode)
Ãdi
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
42
63
ns
TJ = 25°C
VR = 64V,
–––
50
75
TJ = 125°C
IF = 75A
Qrr
Reverse Recovery Charge
–––
59
89
nC TJ = 25°C
di/dt = 100A/μs
g
–––86130
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.5
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 38V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
j, See Fig.11
VGS = 0V, VDS = 0V to 60V h, See Fig. 5
TJ = 25°C, IS = 75A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 75A g
VDS = VGS, ID = 250μA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
ID = 75A
RG = 2.1Ω
VGS = 10V g
VDD = 38V


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