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IRF520NPBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF520NPBF
Spiegazioni elettronici  HEXFET짰 Power MOSFET
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF520NPBF Scheda tecnica(HTML) 1 Page - International Rectifier

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IRF520NPbF
HEXFET® Power MOSFET
PD - 94818
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
S
D
G
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
9.7
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
6.8
A
IDM
Pulsed Drain Current
38
PD @TC = 25°C
Power Dissipation
48
W
Linear Derating Factor
0.32
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
91
mJ
IAR
Avalanche Current
5.7
A
EAR
Repetitive Avalanche Energy
4.8
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.1
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = 100V
RDS(on) = 0.20Ω
ID = 9.7A
TO-220AB
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
11/5/03
Lead-Free


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