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1SS417 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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1SS417 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS417 2004-05-26 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application • Small package • Low forward voltage: VF (3) = 0.56V (typ.) • Low reverse current: IR = 5µA (Max.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P * 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C * Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1mA ― 0.28 ― VF (2) ― IF = 10mA ― 0.36 ― Forward voltage VF (3) ― IF = 50mA ― 0.56 0.62 V Reverse current IR ― VR = 40V ― ― 5 µA Total capacitance CT ― VR = 0, f = 1MHz ― 15 ― pF quivalent Circuit (Top View) Marking JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.6mg(typ.) Unit: mm X 0.1±0.05 0.48 +0.02 -0.03 A 0.07 M A 0.6±0.05 0.2 ±0.05 fSC |
Codice articolo simile - 1SS417_04 |
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Descrizione simile - 1SS417_04 |
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