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BC848B Scheda tecnica(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC848B Scheda tecnica(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page BL Galaxy Electrical Production specification NPN general purpose Transistor BC846/847/848 Document number: BL/SSSTC043 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage BC846 BC847 BC848 V(BR)CBO IC=10μA,IE=0 80 50 30 V Collector-emitter breakdown voltage BC846 BC847 BC848 V(BR)CEO IC=10mA,IB=0 B 65 45 30 V Emitter-base breakdown voltage BC846 BC847 BC848 V(BR)EBO IE=10μA,IC=0 6 6 5 V Collector cut-off current BC846 BC847 BC848 ICBO VCB=70V,IE=0 VCB=50V,IE=0 VCB=30V,IE=0 0.1 μA Collector cut-off current BC846 BC847 BC848 ICEO VCE=60V,IB=0 B VCE=45V,IB=0 B VCE=30V,IB=0 B 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain BC846A,847A,848A BC846B,847B,848B BC846C,847C,848C hFE VCE=5V,IC=2mA 110 200 420 220 450 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=5m B A 0.5 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5m B A 1.1 V Transition frequency fT VCE=5V, IC= 10mA f=100MHz 100 MHz |
Codice articolo simile - BC848B |
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Descrizione simile - BC848B |
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