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AD8067 Scheda tecnica(PDF) 6 Page - Analog Devices |
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AD8067 Scheda tecnica(HTML) 6 Page - Analog Devices |
6 / 24 page AD8067 Rev. A | Page 6 of 24 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Supply Voltage 26.4 V Power Dissipation See Figure 3 Common-Mode Input Voltage VEE – 0.5 V to VCC + 0.5 V Differential Input Voltage 1.8 V Storage Temperature Range –65°C to +125°C Operating Temperature Range –40°C to +85°C Lead Temperature (Soldering 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MAXIMUM POWER DISSIPATION The associated raise in junction temperature (TJ) on the die limits the maximum safe power dissipation in the AD8067 package. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8067. Exceeding a junction temperature of 175°C for an extended period can result in changes in the silicon devices, potentially causing failure. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). Assuming the load (RL) is referenced to midsupply, the total drive power is VS/2 × IOUT, some of which is dissipated in the package and some in the load (VOUT × IOUT). The difference between the total drive power and the load power is the drive power dissipated in the package. RMS output voltages should be considered. PD = Quiescent Power + (Total Drive Power − Load Power) () L OUT L OUT S S S D R V R V V I V P 2 – 2 ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ × + × = If RL is referenced to VS− as in single-supply operation, then the total drive power is VS × IOUT. If the rms signal levels are indeterminate, then consider the worst case, when VOUT = VS/4 for RL to midsupply: () ( ) L S S S D R V I V P 2 4 / + × = In single-supply operation with RL referenced to VS−, worst case is VOUT = VS/2. Airflow increases heat dissipation effectively, reducing θJA. In addition, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes reduces the θJA. Figure 3 shows the maximum safe power dissipation in the package vs. the ambient temperature for the SOT-23-5 (180°C/W) package on a JEDEC standard 4-layer board. θJA values are approximations. It should be noted that for every 10°C rise in temperature, IB approximately doubles (see ). B Figure 22 –40 2.0 1.5 0.5 0 0 AMBIENT TEMPERATURE – °C 1.0 –30 –20 –10 80 10 20 30 40 50 60 70 SOT-23-5 Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
Codice articolo simile - AD8067_06 |
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Descrizione simile - AD8067_06 |
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